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| MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) BUZ900X4S BUZ901X4S NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET Hex Nut M 4 (4 places) POWER MOSFETS FOR AUDIO APPLICATIONS 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 1 R 2 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 ) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) FEATURES * HIGH SPEED SWITCHING 4 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R= 4 .0 (0 .1 57 ) (2 P lac e s) * N-CHANNEL POWER MOSFET * SEMEFAB DESIGNED AND DIFFUSED * HIGH VOLTAGE (160V & 200V) * HIGH ENERGY RATING SOT227 Pin 1 - Drain Pin 2 - Source Pin 3 - Gate Pin 4 - Drain * ENHANCEMENT MODE * INTEGRAL PROTECTION DIODE * P-CHANNEL ALSO AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSX Drain - Source Voltage VGS ID ID(PK) PD Tstg Tj RJC Gate - Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction - Case @ Tcase = 25C BUZ900X4S 160V BUZ901X4S 200V 14V 32A 32A 500W -55 to 150C 150C 0.3C/W Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612. Prelim. 4/94 MAGNA TEC Characteristic BVDSX Drain - Source Breakdown Voltage BVGSS Gate - Source Breakdown Voltage VGS(OFF) Gate - Source Cut-Off Voltage VDS(SAT)* Drain - Source Saturation Voltage IDSX yfs* Ciss Coss Crss ton toff Drain - Source Cut-Off Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Time Turn-off Time BUZ900X4S BUZ901X4S NEW PRODUCT UNDER DEVELOPMENT Test Conditions VGS = -10V BUZ900X4S ID = 10mA BUZ901X4S VDS = 0 IG = 100A VDS = 10V ID = 100mA VGD = 0 ID = 32A VGS = -10V VDS = 160V BUZ900X4S VDS = 200V BUZ901X4S VDS = 10V ID = 5A VDS = 10V f = 1MHz Min. 160 200 14 0.1 Typ. Max. Unit V V V V mA mA S pF ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) 1.5 12 10 10 6 TBE TBE TBE TBE TBE 2 VDS = 20V ID = 7A nS * Pulse Test: Pulse Width = 300S , Duty Cycle 2% D S G Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612. Prelim. 4/94 |
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